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2SK3050
Transistors
10V Drive Nch MOS FET
2SK3050
Structure Silicon N-channel MOSFET External dimensions (Unit : mm)
CPT3
6.5 5.1 2.3 0.5
Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy.
5.5
1.5
0.9
0.75 0.65
(1)Gate (2)Drain (3)Source
0.9
(1)
2.3
(2) (3)
2.3
0.8Min.
0.5 1.0
Abbreviated symbol : K3050
Applications Switching Packaging specifications
Package Code Type Basic ordering unit (pieces) Taping TL 2500
Gate
1
Inner circuit
Drain
2SK3050
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Reverse drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25C) Channel temperature Storage temperature
1 Pw10s, Duty cycle1% 2 L 10mH, VDD=50V, RG=25, 1Pulse, Tch=25C
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed Continuous Pulsed ID IDP IDR IDRP IS ISP IAS EAS PD Tch Tstg
1 2 2 1 1
Limits 600 30 2 6 2 6 2 6 2 21 20 150 -55 to +150
Unit V V A A A A A A A mJ W C C
1 BODY DIODE
Source
Thermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits
6.25
Unit C/W
Rev.A
2.5
1.5
9.5
1/5
2SK3050
Transistors
Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Min. - 600 - 2.0 - 0.5 - - - - - - - - - -
Typ. - - - - 4.4 1.0 280 48 16 12 17 29 105 12.8 3.3 5.5
Max. 100 - 100 4.0 5.5 - - - - - - - - 25.6 - -
Unit nA V A V S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=1A, VGS=10V ID=1A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1A, VDD 300V VGS=10V RL=300 RG=10 VDD=300V VGS=10V ID=2A
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Symbol
Forward voltage Reverse recovery time Reverse recovery charge
Pulsed
VSD trr Qrr

Min. - - -
Typ. - 460 2.0
Max. 2.0 - -
Unit V ns C
Conditions IS= 2A, VGS=0V IDR=2A, VGS=0V di/dt= 100A / s
Rev.A
2/5
2SK3050
Transistors
Electrical characteristic curves
10 5
ea ar ) is on th S( in RD n tio by ra d pe ite O lim is
2.0
5
Ta=25C Pulsed
VGS=10V
2
VDS=10V Pulsed
DRAIN CURRENT : ID (A)
2 1 0.5 0.2 0.1 0.05
10
DRAIN CURRENT : ID (A)
1.6
6V
DRAIN CURRENT : ID (A)
m
s
1 0.5
Ta= -25C 25C 75C 125C
s 0 s 10 1m
PW
C D
0 =1
1.2
s 0m tion ra pe O
50 100 200 500 1000
5.5V
0.8
5V
0.2 0.1 0.05 0.02 0
0.4
4.5V
0.02 Tc=25C Single pulse 0.01 12 5 10 20
0 0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Maximum safe operating area
Fig.2 Typical output characteristics
Fig.3 Typical transfer characteristics
GATE THRESHOLD VOLTAGE : VGS(th) (V)
6 5 4 3 2 1 0 -50 -25
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VDS=10V lD=1mA
100
VGS=10V Pulsed
Ta=125C 75C
9 8
7 6
ID=2A
Ta=25C Pulsed
20
25C -25C
10
5
5 4 3 0
1A
2
0
25
50
75
100 125 150
0.01 0.02
0.05 0.1 0.2
0.5
1
2
5
10
5
10
15
20
25
30
CHANNEL TEMPERATURE : Tch (C)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Gate threshold voltage vs. channel temperature
Fig.5 Static drain-source on-state resistance vs. drain current
Fig.6 Static drain-source on-state resistance vs. gate-source voltage
FORWARD TRANSFER ADMITTANCE : |YfS| (S)
REVERSE DRAIN CURRENT : IDR (A)
15
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VGS=10V Pulsed
2
5 2 1 0.5 0.2 0.1 0.05 0.02 0
VDS=10V Pulsed
Ta=-25C 25C 75C 125C
VGS=0V Pulsed
1
0.5
10
Ta=125C 75C 25C -25C
ID=2A
0.2
5
1A
0.1
0.05
0 -50 -25
0
25
50
75
100 125 150
0.02 0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
CHANNEL TEMPERATURE : Tch (C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static drain-source on-state resistance vs. channel temperature
Fig.8 Forward transfer admittance vs. drain current
Fig.9 Reverse drain current vs. source-drain voltage ( )
Rev.A
3/5
2SK3050
Transistors
5
REVERSE DRAIN CURRENT : IDR (A)
Ta=25C Pulsed
0V
CAPACITANCE : C (pF)
1000 500 200 100 50 20 10 5 VGS=0V 2 Pulsed
5000 2000
Ciss
SWITCHING TIME : t (ns)
2 1 0.5
VGS=10V
1000 500 200 100 50 20 10
Ta=25C VDD=300V VGS=10V RG=10 Pulsed
Coss
tf
0.2 0.1 0.05 0
Crss
Ta=25C f=1MHz
td(off) tr
0.5 1
td(on)
2 5 10 20
0.5
1.0
1.5
0.5
1
2
5
10
20
50 100 200
500 1000
0.05 0.1 0.2
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
Fig.10 Reverse drain current vs. source-drain voltage ( )
Fig.11 Typical capacitance vs. drain-source voltage
Fig.12 Switching characteristics
500
DRAIN-SOURCE VOLTAGE : VDS (V)
14
VDS VDD=400V
VGS
400
12 10
REVERSE RECOVERY TIME : trr (ns)
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25C ID=2A Pulsed
5000
Ta=25C di/dt=100A/s VGS=0V 2000 Pulsed
300
350V 100V
1000 500
VDD=100V 8 350V
200
6 4
400V
200 100 50 0.05 0.1 0.2
100 2 0 0 0 16
2
3
4
5
10
12
14
0.5
1
2
5
10
TOTAL GATE CHARGE : Qg (nC)
REVERSE DRAIN CURRENT : IDR (A)
Fig.13 Dynamic input characteristics
Fig.14 Reverse recovery time vs. reverse drain current
10
NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE
1
D=1 0.5 0.2
0.1
0.1 0.05 0.02
0.01
0.01 Single pulse
Tc=25C th(ch-c)(t)=r(t) * th(ch-c) th(ch-c)=6.25C/W
PW
T D=PW T
0.001 10
100
1m
10m
100m
1
10
PULSE WIDTH : PW (s)
Fig.15 Normalized transient thermal resistance vs. pulse width
Rev.A
4/5
2SK3050
Transistors
Switching characteristics measurement circuit
Pulse width 50% 10% 10% 90% 50%
VGS
ID D.U.T. RL
VDS
VGS VDS
RG
10% 90% 90%
td(off) tf toff
VDD
td(on) ton tr
Fig.16 Switching time measurement circuit
Fig.17 Switching time waveforms
IG=2mA RG
VGS
ID D.U.T. RL
VDS
VDD
Fig.18 Gate charge measurement circuit
Rev.A
5/5
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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